Reliability and Memory Characteristics of Sequential Laterally Solidified Low Temperature Polycrystalline Silicon Thin Film Transistors with an Oxide–Nitride–Oxide Stack Gate Dielectric

Abstract

In this work, low temperature polycrystalline silicon (LTPS) thin film transistors (TFTs) with sequential lateral solidification (SLS) laser annealing process were fabricated. The grain boundaries (GB) can be well-controlled to avoid the channel area, so that the device mobility is created enhanced. The device performance and reliability between oxide–nitride–oxide (ONO) stacked gate dielectric devices and conventional SiO2 devices have been measured and analyzed under AC stress conditions. These results indicate that LTPS TFTs with ONO structure exhibit better reliability characteristics than conventional ones. A TFT metal–oxide–nitride–oxide–silicon (MONOS) memory device is also investigated. This MONOS device is a promising embedded non-volatile memory candidate to reduce power consumption for mobile applications.