Abstract
Single grain thin-film transistors (SG-TFTs) fabricated inside a location-controlled grain by µ-Czochralski process have as high as SOI performance despite low-temperature process. Reliability of SG-TFTs is a very important issue. The degradation effects of SG-TFTs under bias-stress conditions are mostly mobility degradation, threshold voltage changing, subthreshold characteristic degradation. These effects need to be modeled in order to predict the reliability for any bias-stress conditions applied to the device. To obtain that, extraction parameters strategy of degradation model has to be found out. The degradation model is thus confirmed for different bias-stress conditions.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
