Abstract
In the concerned research work, an extensive study has been carried out for a newly developed carbon nanotube truncated fin (CNT-TF) FinFET from an analog as well as a linearity point of view. All the simulated work has been gleaned for n-type FET on Silvaco software for TCAD. Firstly, CNT-TF-FinFET has been combatted against TF-FinFET which gave out the enhanced results as 750 times and 2.13 times for switching ratio and Vth respectively. After perceiving, CNT-TF-FinFET was studied at different temperatures, out of which the device at 200 K achieved zenith with 67.7 %- and 1000-times enhancement in efficiency and IMD3 respectively. The device also shows the linear behavior at higher temperatures in terms of gm3 and VIP3. All these accomplishments made the CNT-TF-FinFET a much better competent to be operated at extreme geographic poles of earth or in outer space with extremely low temperatures.
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