Abstract
We investigated the reliability of resistive random access memory (ReRAM) under two different types of incremental step pulse programming (ISPP) along with the yield enhancement by the customized programming pulses based on the susceptibility of memory cells. Adaptive step-size control of ISPP enabled by an analog-to-digital converter (ADC) based sense amplifier significantly reduces the cycling disturbance by 54% because of the decreased number of effective write accesses. The programming yield of ReRAM was further improved with a proposed write scheme. The defective ReRAM cells are classified as soft fail cells and hard fail cells by the ADC-based sense amplifier, and soft fail cells are rescued by using a modified programming pulse. Measurements verified that the programming yield drop of 3% is completely recovered by the program pulse shaping.
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