Abstract
Metal impurity release from structural defects in polycrystalline silicon was studied following thermal treatments, and, in addition, a correlation between impurity distributions and structural defects was established. Impurities were mapped with synchrotron-based x-ray fluorescence in the as-grown state, after rapid thermal annealing and following aluminum gettering treatments. The goal of this work was to determine if impurity release from structural defects limits gettering of metal impurities. The results reveal that nickel and copper metal impurities are primarily found at dislocations in as-grown crystals, and the release of these impurities from defects occurs rapidly with no apparent barrier to dissolution. Gettering treatments dissolved metal impurity precipitates to <2–5 nm in radii; however, the material performance was not greatly enhanced.
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