Abstract
KBT ceramics were synthesized by the solid–state reaction method and subjected to an annealing at 1000 °C for different time, respectively. The variation of the dielectric behaviors is believed to be related to the normal ferroelectric–relaxor transition of KBT. X–ray diffraction and Raman scattering analysis affirmed the effect of annealing temperature on the phase structure and the local structure of A–site cations, which result in the normal ferroelectric–relaxor switching of KBT.
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