Abstract
AgNbO3-based materials have attracted extensive attention in energy storage due to their double hysteresis loops, but they suffer from low breakdown strength (Eb). AgNbO3 films with few defects and small thickness exhibit high Eb, which helps to improve the energy storage performance. In this work, we successfully prepared AgNbO3 thin films on (110) SrTiO3 substrate using pulsed laser deposition technology. The AgNbO3 film shows good crystalline and relaxor ferroelectric behavior. A high Eb up to 1200 kV/cm is obtained in AgNbO3 film, which contributes to good recoverable energy storage density Wrec up to 10.9 J/cm3 and energy efficiency η of 75.3%. Furthermore, the Wrec remains above 2.9 J/cm3 and the η varies between 72.5% and 82.5% in a wide temperature range of 30–150 °C. This work reveals the great potential of relaxor ferroelectric AgNbO3 film for energy storage.
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