Abstract
AbstractRelaxed, high Ge content SiGe layers have been realized using stress balance on acompliant borophosphorosilicate glass (BPSG). A 30-nm fully-strained Si0.7Ge0.3 layer wastransferred onto a 1 μm BPSG film by wafer-bonding and Smart-cutρ processes, after which thecontinuous Si0.7Ge0.3 film was patterned into small islands to allow for lateral expansion. Afterthe strain in Si0.7Ge0.3 islands was released by the lateral expansion resulting from the flow of theBPSG, a Si0.4Ge0.6 layer was commensurately deposited under compression. Upon equilibriumafter an annealing, stress balance was formed between the SiGe films, resulting in a larger inplanelattice constant than that of relaxed Si0.7Ge0.3. With a thiner (6 nm) Si0.7Ge0.3 starting film,an in-plane lattice constant equivalent to fully-relaxed Si0.45Ge0.55 has been obtained.
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