Abstract
In x Ga 1−x As structures with compositionally graded buffers were grown with organometallic vapor phase epitaxy on GaAs substrates and characterized with plan-view and cross-sectional transmission electron microscopy, atomic force microscopy, and x-ray diffraction. The results show that surface roughness experiences a maximum at growth temperatures where phase separation occurs in InxGa1−xAs. The strain fields from misfit dislocations induce this phase separation in the 〈110〉 directions. At growth temperatures above and below this temperature, the surface roughness is decreased significantly; however, only growth temperatures above this regime ensure nearly complete relaxed graded buffers with the most uniform composition caps. With the optimum growth temperature for grading InxGa1−xAs determined to be 700 °C, it was possible to produce In0.33Ga0.67As diode structures on GaAs with threading dislocation densities <8.5×106/cm2.
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