Abstract
In this paper, we study three-dimensional (3D) unipolar and bipolar hydrodynamic models and corresponding drift-diffusion models from semiconductor devices on bounded domain. Based on the asymptotic behavior of the solutions to the initial boundary value problems with slip boundary condition, we investigate the relation between the 3D hydrodynamic semiconductor models and the corresponding drift-diffusion models. That is, we discuss the relation-time limit from the 3D hydrodynamic semiconductor models to the corresponding drift-diffusion models by comparing the large-time behavior of these two models. These results can be showed by energy arguments. Copyrightcopyright 2011 John Wiley & Sons, Ltd.
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