Relaxation spectrum of the TlSbSe2 thin films

Abstract

The dielectric constant and the dielectric loss of TlSbSe2 thin films, obtained via thermal evaporation of TlSbSe2 crystals grown by Stockber-Bridgman technique, have been measured using ohmic Al electrodes in the frequency range 0.2–100 KHz and within the temperature interval 293–353 K. The capacitance are found to decrease with increasing frequency and increase with increasing temperature. The activation energy values were evaluated too. A good agreement between the activation energy values obtained from capacitance and dielectric loss factor measurements has been observed.