Abstract
The relaxation of the electrical resistance in amorphous films of Bi, Yb, Be, and Mn is investigated at low temperatures. It is shown that this process during an isothermal hold is ordinarily a simple exponential process with a single characteristic relaxation time. In amorphous metal–hydrogen films a subbarrier tunneling of hydrogen atoms apparently occurs. It is conjectured that this is the cause of the delay in the onset of superconductivity at T=4.2 K after completion of the condensation of amorphous Be–H films.
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