Abstract
The modeling and comparative analysis of the relaxation processes in four different heterostructures: traditional heterotransistor, heterotransistor with two channels (heterojunctions), heterotransistor with two channels and a system of quantum dots (QDs), as well as heterotransistor with two channels and two systems of quantum dots were made. It is shown that the heating of electrons in high electric fields in heterotransistors with embedded quantum dots with two heterojunctions is less intensive, and the values of the drift velocity is higher than in the other structures under study.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
