Abstract
Using X-ray topography, we studied the dependence of the stress relaxation process in strained In x Ga 1- x As/InP quantum wells on time and temperature. We compared the dependence of dislocation multiplication on annealing time and temperature with the empirical model for stress relaxation [B.W. Dodson and J.Y. Tsao, Appl. Phys. Lett. 51 (1987) 1325]. We determined the dislocation glide activation energy (1.1±0.1 eV) and a material-specific constant for the model. We also explained the as-grown dislocation density considering the dislocation multiplication during growth. The dislocation densities in In x Ga 1− x As/InP quantum wells can be reduced by limiting the growth rate and growth temperature.
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