Abstract
Recently, reversible resistance ( R) changes were observed in thin tunnel junctions (TJ) when a critical electrical current was applied. These changes are called current-induced switching (CIS) and are attributed to electromigration in nanoconstrictions in the insulating barrier. Here, we study the CIS effect on a thin TJ prepared by IBD, displaying a 3.4% R change when a CIS cycle is performed at room temperature. After complete ( or half) CIS cycles with adequate maximum currents, we monitored R as a function of time. In both cases a non-monotonic relaxation occurs with two distinct relaxation times, τ 1 ∼ 10 min , τ 2 ∼ 1 0 2 min . First R increases ( decreases) rapidly, but then a slow relaxation dominates, reducing ( increasing) R. These opposite relaxation processes suggest two independent physical mechanisms acting simultaneously inside the TJ. The physical origin of these effects is discussed.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.