Abstract
Thermal oxidation of 4H-SiC to grow native-oxide SiO2 is always followed by the generation of crystal defects and lattice distortion. We studied the relaxation of this distorted lattice on thermally-oxidized 4H-SiC surface by performing annealing process with several conditions. The surface distortion could be relaxed partially by annealing under argon, nitrogen monoxide, and H2O gases, confirmed by in-plane X-ray diffractometer. This surface relaxation is possibly induced by the release of oxygen-related defects, as confirmed by thermal desorption analysis. The surface distortion caused by thermal oxidation is due to the existence of oxygen in 4H-SiC lattice, while the relaxation is caused by the migration of the oxygen-related defect structure, and emitted from 4H-SiC surface region as CO molecule.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
