Relaxation of strain in patterned strained silicon investigated by UV Raman spectroscopy

Abstract

Tensile strained Si (sSi) layers were epitaxially deposited onto fully relaxed Si 0.78Ge 0.22 (SiGe) epitaxial layers (4 μm) on silicon substrates. Periodic arrays of 150 nm × 150 nm and 150 nm × 750 nm pillars with a height of 100 nm were fabricated into the sSi and SiGe layers by electron-beam lithography and subsequent reactive ion etching. The strain in the patterned and unpatterned samples was analyzed using high-resolution UV micro-Raman spectroscopy. The 325 nm excitation line used probes strain in Si close to the surface (penetration depth of ∼9 nm). The Raman measurements revealed that the nano-patterning yields a relaxation of strain of ∼33% in the large pillars and ∼53% in the small pillars of the ∼0.95% initial strain in the unpatterned sSi layer.