Abstract
The results of investigation of the effect of irradiation with photons from an L5013VC violet light-emitting diode (LED) with the wavelength of 400 nm and power of 76 mW on the resistance of the sensitive layer of SnO2-based test structures of gas sensors in air before and after the high-temperature stabilizing annealing are presented. The features in the variation of the SnO2-layer resistance in time are established when the LED is switched on and off.
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