Abstract
Relaxation of thermoremanent magnetization (TRM) of Cd1−xMnxTe diluted magnetic semiconductors (DMS) in the spin-glass state have been studied under light illumination. The relaxation of TRM can be described well by a power law decay, M(t)=M(t0)t−α (t≳t0, t0∼2 s). The variations of the decay parameter α with the illumination light intensity has been measured and a relation which indicates that α is proportional to the photogenerated carrier concentration n has been observed.
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