Abstract
Relaxation of the persistent photoconductivity (PPC) in Cu(In,Ga)Se 2 has been investigated. Conductance transients have been measured for thin layers in order to analyze carrier trapping and emission processes and compared with capacitance kinetics obtained for a complete solar cell. Relaxation time constants have been recorded as a function of temperature to calculate activation energies of observed processes. Dependence of the relaxation time constant on the light pulse width is also presented both for the layers and a complete solar cell. The origin of the metastability is discussed in terms of a DX-type defect conversion model involving a strong lattice relaxation.
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