Abstract
A semiclassical Monte Carlo approach is adopted to study the multivalley spin depolarization ofdrifting electrons in a doped n-type GaAs bulk semiconductor, in a wide range of lattice temperature (40 K < TL < 300 K) and dopingdensity (1013 cm − 3 < n < 1016 cm − 3). The decay of the initial non-equilibrium spin polarization of the conduction electrons isinvestigated as a function of the amplitude of the driving static electric field, ranging between0.1 and6 kV cm − 1, by considering the spin dynamics of electrons in both theΓ-valley and the upper valleys of the semiconductor. Doping density considerably affects spinrelaxation at low temperature and weak intensity of the driving electric field. Athigh values of the electric field, the strong spin–orbit coupling of electrons in theL-valleyssignificantly reduces the average spin polarization lifetime, but, unexpectedly, for field amplitudes greaterthan 2.5 kV cm − 1, the spin lifetime increases with the lattice temperature. Our numerical findings arevalidated by a good agreement with the available experimental results and withcalculations recently obtained by a different theoretical approach.
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