Abstract
Electron energy relaxation in the asymmetric double quantum dot system is calculated numerically, using the material parameters of GaAs. The double dot, sharing a single electron, consists of two tunneling coupled quantum dots each having a single nondegenerate electronic orbital. The intra-dot multiple scattering of the single electron on the longitudinal optical phonons is assumed. The inter-dot interaction is provided by the electronic tunneling mechanism. The dependence of the relaxation rate on the thickness of the tunneling barrier, on the temperature, and on the electron energy-level separation, is calculated.
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