Relaxation of electron energy in polar semiconductor double quantum dot

Abstract

Electron energy relaxation in the asymmetric double quantum dot system is calculated numerically, using the material parameters of GaAs. The double dot, sharing a single electron, consists of two tunneling coupled quantum dots each having a single nondegenerate electronic orbital. The intra-dot multiple scattering of the single electron on the longitudinal optical phonons is assumed. The inter-dot interaction is provided by the electronic tunneling mechanism. The dependence of the relaxation rate on the thickness of the tunneling barrier, on the temperature, and on the electron energy-level separation, is calculated.