Abstract
An approach is proposed to understand the role of relaxation enhancing interlayers in the evolution of threading and misfit dislocations in growing lattice mismatched films. The approach based on the ability of misfit dislocations to reduce their local stresses due to the influence of relaxation enhancing interlayers. The diminishing of these local stresses eliminates blocking effect of misfit dislocations and allows efficient motion of threading dislocations with consequent overall strain relaxation in the heteroepitaxial film. An analytical model is developed which quantitatively describes the dislocation density changes during growth with relaxation enhancing interlayers. The applications of the approach to lattice engineered substrates (exploring the techniques of internal oxidation) and weakly bonded compliant layers are discussed.
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