Abstract

The lifetime of the 1s 2 2s 2 2p 2P3/2 level as well as the fine structure energy splitting between 2P3/2 and 2P1/2 levels in the boron isoelectronic sequence for low to medium Z elements (Z = 14−36) and for selected high-Z elements (Z = 54, 64, 79, 82, 83, 92) have been calculated using the Dirac-Fock Multiconfiguration method with both quantum-electrodynamic and electronic correlation corrections included. All-order Breit and vacuum polarization corrections were included in the calculation, with a fully optimized active set wavefunction. The results are compared with other theoretical data, NIST database recommended values, and available experimental data. A good agreement with both theoretical and experimental values is obtained.

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