Relatively low temperature deposition of graphene like films with ethane GCIB irradiation

Abstract

Abstract Relatively low-temperature depositions of graphene like film on Ni substrate were studied using ethane gas cluster ion beam (GCIB). Ethane GCIBs realize shallow carbon implantation and create high temperature and high pressure conditions, which lead to reduction of substrate temperature. By optimization of deposition conditions, it was found that graphene like films were formed on Ni by 5 keV ethane GCIB irradiation at substrate temperature of 400 °C. Abstract code: (given by the organizing committee).