Relative Stability of Near-Surface Oxygen Vacancies at the CeO2(111) Surface upon Zirconium Doping

Abstract

The effects of Zr doping on the stability of the CeO₂(111) surface as a function of the dopant concentration and distribution, as well as on the relative stability of surface and subsurface oxygen vacancies, were studied by means of density functional theory (DFT+U) calculations. For a given Zr content, the more stable structures do not correspond to those configurations with Zr located in the topmost O–Ce–O trilayer (TL1), but in inner layers, and the stability decreases with increasing Zr concentration. For the undoped CeO₂(111) surface, the preference of subsurface vacancies with next-nearest neighbor (NNN) Ce³⁺ configuration has earlier been predicted. For the Zr-doped surface, the formation of vacancies was studied using a surface unit cell with 2 × 2 periodicity, and it was found that the most stable configuration corresponds to the Zr atom located in the surface layer (TL1) neighboring a subsurface oxygen vacancy with NNN Ce³⁺, being the formation energy equal to 1.16 eV. The corresponding surface oxygen vacancy is 0.16 eV less stable. These values are by 0.73 and 0.92 eV, respectively, smaller than the corresponding ones for the pure CeO₂(111) surface. Moreover, when Zr is located in TL2 the subsurface vacancy becomes by 0.10 eV less stable, compared to Zr in the TL1. The Ce³⁺ preference for the next-nearest neighbor cationic sites to both surface and subsurface vacancies at CeO₂ (111), becomes more pronounced upon Zr doping. The results are explained in terms of Zr- and vacancy-induced lattice relaxation effects.