Abstract
This paper describes the useful yields of positive 11B, 28Si, and 70Ge ions produced from the surface of B-doped Si1−xGex alloys when the surface is irradiated by an 8 keV positive O2 ion beam. Boron doping into alloys was done by implanting 11B ions with an energy of 30 keV at a dose of 1×1015 cm−2. The reactive sensitivity factors (RSFs) of 11B to the matrix isotopes of 28Si or 70Ge are determined using the useful yields, and the relationships between the RSFs and the alloy compositions are shown. Also described are the RSFs of 11B estimated from the local thermal equilibrium model with two internal standard elements of Si and Ge. The theoretical RSFs were a factor of 3–4 greater than the experimental RSFs.
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