Relative intensity noise of silicon-based quantum dot lasers

J Duan,J E Bowers,F Grillot,D Jung,J C Norman,H Huang

doi:10.1109/iciprm.2019.8819368

Relative intensity noise of silicon-based quantum dot lasers

J Duan, J E Bowers + Show 4 more

Open Access

https://doi.org/10.1109/iciprm.2019.8819368

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Publication Date: May 1, 2019

Citations: 1

Affiliation: Télécom Paris, Laboratoire Traitement et Communication de l’Information, Institut Polytechnique de Paris, University of California, Santa Barbara

#Relative Intensity Noise #Relative Intensity Noise Level + Show 8 more

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Abstract

This work experimentally investigates the relative intensity noise (RIN) of semiconductor quantum dot (QD) lasers epitaxially grown on silicon. Owing to the low threading dislocations density and the p-modulation doped GaAs barrier layer in the active region, a RIN level as low as −150 dB/Hz at 9 GHz is demonstrated. The results show that the p-doping decreases the high-frequency RIN and the damping factor. In the latter, a damping factor up to 30 GHz at three times the threshold is extracted from the RIN spectrum along with a K-factor of 1.7 ns. These results pave the way for high speed and low noise QD devices for future integrated photonics technologies.

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