Abstract

Gold-silver alloy films deposited on silicon wafers were annealed at temperatures between 100{degree sign}C and 400{degree sign}C, and subsequently dealloyed. The grain morphology and stress-state evolution of the samples before and after dealloying were studied by scanning electron microscopy and wafer curvature measurements. The residual stress in alloy films was augmented through thermal treatment; however, the subsequent dealloying step mitigated the residual stress without introducing significant changes in pore morphology. Possible mechanisms for stress and morphology evolution are reported.

Full Text
Published version (Free)

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call