Abstract

We have investigated the photovoltaic properties of multilayered organic photovoltaic devices consisting of indium tin oxide (ITO)/(NiO)/donor/C60/bathocuproine (BCP)/Al structures. Open circuit voltage (VOC) increases with the decrease in temperature between 40 and 350 K. The VOC was, however, pinned at approximately 0.6 V for the device without NiO, probably owing to the insufficient work-function difference between ITO and Al electrodes. The hole injection was also markedly suppressed at the ITO/donor interface in the device with large IP donor materials without the buffer layer and abnormal S-shaped current density–voltage (J–V) characteristics were observed. On the other hand, the value of VOC increases with the increase in ionization potential (IP) of donor materials in the device with NiO buffer layers owing to the enhanced work-function difference of about 1 eV, and the S-shaped curves disappeared at the high temperatures above 200 K. The VOC is further improved to nearly 1.2 V by the UV–ozone treatment of the NiO surface. We have therefore concluded that the increment of work function of the anode caused by the insertion of an oxide buffer layer and the surface treatment of the electrode by UV–ozone treatment are essentially important for the improvement of VOC and charge transport/injection properties in the multilayered organic solar cell applications.

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