Abstract
Peculiarities of contact formation in the system NbN-GaAs upon a change in the structural-phase state of the deposited metal are investigated. It is shown that the role of the chemical factor in the processes of contact formation decreases as the degree of structural perfection of the NbN alloy increases. The causes of the corresponding changes in the electronic structure of the interface as a result of the phase transition NbN-Nb4N3 are discussed. The Auger spectrum and current-voltage and capacitance-voltage characteristics of NbN-GaAs surface-barrier structures are measured before and after annealing in vacuum at T=850 °C for 10 s.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
