Relationship between texture and electromigration lifetime in sputtered AI-1% Si thin films

Abstract

The relationship among the grain structure, texture, and electromigration lifetime of four Al-1% silicon metallizations produced under similar sputtering conditions was explored. The grain sizes and distributions were similar and the grain structure was near-bamboo for all metallizations. All metallizations exhibited a near-(111) fiber texture, as determined by the pole figure technique. Differences in electromigration behavior were noted. Three of the metallizations exhibited a bimodal failure distribution while the fourth was monomodal and had the longest electromigration lifetime. The electromigration lifetime was directly related to the strength of the (111) fiber texture in the metallization as anticipated. However, whereas the grain size distribution has an effect on the electromigration lifetime when metallization lines are several grains wide, the electromigration lifetime of these near-bamboo metallizations appeared independent of the grain structure. It was also observed that a number of failures occurred in the 8 μm interconnect supplying the 5 μm wide test lines. This apparently reflects an increased susceptibility of the wider interconnect lines to electromigration damage.