Abstract
The fluctuation of the line edge of resist patterns, called line edge roughness (LER), has been the most serious problem in the development of next-generation lithography. The major root cause of LER is the chemical inhomogeneity at the boundary between the insoluble and soluble regions of the resist. In this study, the stochastic effect induced in the processes of formation of resist patterns was investigated using a Monte Carlo method. The relative standard deviation of acid concentration was smaller than that of absorbed photons. The relative standard deviation of protected units was smaller than that of acid concentration. By comparing the simulation results with the reported values of LER, it was found that the stochastic effect is further reduced in the development and rinse processes.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
