Abstract
This study prepared Mott-metal state thin film La2Ti2O7-x on TiN substrate using atomic layer deposition, and confirmed W/La2Ti2O7-x/TiN clockwise forming-less resistive switching. The resistive switching mechanism was voltage-driven and oxygen vacancy doping-controlled Mott transition. Positive voltage induces the formation of oxygen vacancy in La2Ti2O7-x and change it from Mott-metal to Mott-insulator state, with the process reversible under negative voltage. We show that N doping can reduce the Ti3+ ratio in La2Ti2O7-x film, producing a weakly correlated system compared with La2Ti2O7-x film without N-doping. Nitrogen doping also increased resistive switching operation voltage and reduced La2Ti2O7-x film on/off ratio. Thus, La2Ti2O7-x, was a promising candidate for the fabrication of resistive switching device based on Mott transition.
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