Abstract
The kinetics of secondary recrystallization and high temperature creep fracture behaviour of bubble-strengthened (KSiAl-doped) tungsten wires have been investigated using emission electron microscopy and scanning electron microscopy. Two different doped wires were chosen that exhibited different creep properties, and their recrystallization and fracture behaviour were compared. In addition, creep and fracture behaviour of an undoped wire was also investigated. Under the applied creep conditions (T = 2900 K ; = 5 MPa), fracture of the samples was caused by grain boundary cavitation, due to the coarsening and growth of the bubbles in doped wires, and due to the growth of deformation-induced microcracks in the undoped material. The results suggested that, in the case of bubble-strengthened tungsten, the high temperature fracture behaviour of the wire can be predicted from its recrystallization kinetics.
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