Abstract
The passivation properties and band structures in aluminum oxide (AlOx) deposited by ozone-based atomic layer deposition (ALD) at room temperature on p-type crystalline silicon were investigated by X-ray photoelectron spectroscopy (XPS). The effective carrier lifetime depends on the thickness of AlOx films, since the field effects induced in the films by fixed charges depend on film thickness. The fixed charges are different by two orders of magnitude between films with thicknesses of 10 and 30 nm. At the 30-nm-thick AlOx/Si interface, the completely accumulated band bending of the Si surface was observed. On the other hand, a thin depletion layer was formed at the 10-nm-thick AlOx/Si interface. From the time-dependent XPS measurements, a hole trap was observed toward AlOx, in which trapping centers existed.
Published Version
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