Abstract
This study examines the relationship between the electrical properties and Raman spectra of field effect transistors (FETs) produced using chemical vapor deposited (CVD) graphene transferred onto hexagonal boron nitride (h-BN) structures. Carrier mobility values were calculated based on the electrical properties of the fabricated FETs, where the highest carrier mobility was 39 989 cm2/Vs. Carrier mobility increased with a decrease in the full width at half maximum (FWHM) of the 2D-band peak of CVD graphene. A linear relationship with a slope of 2.18 between the G-band and 2D-band peak positions was detected, indicating that a uniaxial strain existed in the CVD graphene FETs. Based on the peak shifts in the 2D-band, it was determined that both compressive and tensile strains were responsible for limiting carrier mobility. Ultimately, the analysis of peak positions and FWHMs of 2D-bands enabled us to evaluate the uniformity of electrical properties of CVD graphene without fabricating specialized measurement devices.
Highlights
To understand the scatter in the carrier mobility of chemical vapor deposited (CVD) graphene, Raman spectroscopy was used to characterize the channels of graphene field effect transistors (FETs)
This study examines the relationship between the electrical properties and Raman spectra of field effect transistors (FETs) produced using chemical vapor deposited (CVD) graphene transferred onto hexagonal boron nitride (h-BN) structures
CVD graphene was transferred onto high-pressure high-temperature (HPHT)-synthesized hexagonal boron nitride (h-BN) because h-BN provides a simple structure for understanding the electrical properties
Summary
To understand the scatter in the carrier mobility of CVD graphene, Raman spectroscopy was used to characterize the channels of graphene field effect transistors (FETs). This study examines the relationship between the electrical properties and Raman spectra of field effect transistors (FETs) produced using chemical vapor deposited (CVD) graphene transferred onto hexagonal boron nitride (h-BN) structures.
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