Abstract
The interfacial superstructures of Sb/GaAs(001) contacts are observed by use of the grazing-incidence x-ray-diffraction method. The Schottky-barrier heights for these contacts are also determined by using the current-voltage or the capacitance-voltage methods. The Schottky-barrier height of the contact with the (1\ifmmode\times\else\texttimes\fi{}6) interfacial superstructure is found to be larger than that of the contact with the (1\ifmmode\times\else\texttimes\fi{}4) interfacial superstructure by as much as 0.1 eV. This result indicates the importance of the local electronic structure for Schottky-barrier formation at the metal-GaAs interfaces. The present results are discussed in connection with the current Schottky-barrier models.
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