Abstract
The relationship between the infrared absorption coefficient and the resistivity was examined experimentally in undoped and In-doped liquid-encapsulated Czochralski grown semi-insulating GaAs. The resistivity increases from ∼106 to 5×108 Ω cm with an increase in the infrared absorption coefficient at 1 μm from 0.6 to 1.0 cm−1 in Ga-rich GaAs, and decreases from about 5×108 to 5×106 Ω cm with an increase in the infrared absorption coefficient from 1.0 to 3.0 cm−1 in As-rich GaAs. This fact provides a physical basis for the use of infrared transmission topography as a nondestructive, rapid characterization technique for the evaluation of the two-dimensional uniformity in resistivity of semi-insulating GaAs.
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