Abstract
In this paper, the relationship between exciton recombination zone and applied voltage in organic light-emitting diodes (OLEDs) ITO/NPB (40 nm)/Alq 3( w nm)/rubrene(3 nm)/Alq 3(50− w)/Al, in which a 3 nm rubrene as sensing layer is inserted in Alq 3 layer at different depth, is studied. By comparing the electroluminescence (EL) spectra of device driven under different applied voltages, a conclusion can be drawn that the recombination zone shifts logarithmically with increasing applied voltages.
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