Abstract
The relationship between photoluminescence properties of InGaAs detector epi-wafers and the performances of focal plane arrays has been established according to the measurements of various samples. The average signal, dark signal and noise of the fabricated focal plane arrays were characterized and correlated to the photoluminescence intensities and nonuniformities of the epi-wafers. The average response signal is increased as the increased photoluminescence. The signal nonuniformity and dark signal are markedly related to nonuniformity of photoluminescence intensity, while the noise voltages are not correlated to photoluminescence results. The microwave photoconductance decay measurements reveal that the epi-wafers with stronger photoluminescence intensity has longer minority carrier lifetime. This work supplies a feasible pathway to evaluate and predict the performances of focal plane arrays fabricated by InGaAs detector epi-wafers before device processing.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
