Abstract
The theoretical and empirical expressions most commonly used for modeling the variation of the low field surface mobility of MOSFETs are discussed. It is shown that both approaches may be reconciled, and a new physical definition of the parameters of the empirical model is presented, In particular, we propose an analytical formula of the factor /spl theta//sub 2/ characterizing the quadratic dependence of the reciprocal mobility on the inversion charge. Both the formula and experiment agree and show that /spl theta//sub 2/ does not only depend on the surface roughness scattering term, but also on phonon scattering.
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