Abstract
This paper reports the relationship between oxygen concentration and dislocation multiplication in silicon crystals during directional solidification using numerical analysis. Based on the Alexander–Haasen–Sumino model, this analysis involved oxygen diffusion from the bulk to dislocation cores during crystal growth and annealing processes in a furnace. The results showed that the dislocation density mainly increased during cooling process, rather than crystal growth, when the effect of oxygen diffusion to dislocation cores was ignored. On the contrary, the dislocation density increased during both crystal growth and cooling processes when the effect of interstitial oxygen diffusion was considered. At a dislocation density larger than 1.0 × 105 cm−2, the interstitial oxygen concentration in bulk decreased due to the diffusion process, if interstitial oxygen atoms were between dislocations, whereas the concentration at dislocation cores increases.
Highlights
Dislocation is one of the most harmful defects in silicon crystals, causing current leakage in photovoltaic cells and large scale integrated circuits [1]
We focus on the relationship between oxygen concentration and dislocation multiplication in silicon crystals
We studied the effects of interstitial oxygen on the dislocation multiplication in silicon crystals having inhomogeneous distribution of oxygen concentrations during both crystal growth and cooling processes using numerical analysis
Summary
Dislocation is one of the most harmful defects in silicon crystals, causing current leakage in photovoltaic cells and large scale integrated circuits [1]. M’Hamdi et al reported that the dislocation density increased during the cooling process, rather than during crystal growth [2]. Imai et al [3] reported that oxygen concentration affected the dislocation velocity as a function of shear stress in silicon crystals. The crack was introduced into silicon crystals grown by the floating zone, Czochralski (CZ)-grown, and magnetic field-applied CZ methods. They reported the measured dislocation velocity under applied stress at elevated temperature having different oxygen concentrations
Sign-in/Register to view highlights & summary Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
