Abstract
As the critical dimension of LSI continues to decrease, the surface tension of water and its effect on the formation of watermarks is becoming a significant problem. It is known that watermarks are easily generated when a silicon hydrophobic surface is dried in a wet cleaning process. Many studies about watermarks have been reported [1, 2]. Additionally if the rinse and dry steps were performed under an inert (nitrogen) ambient and the rinse water had low oxygen concentration, watermarks could be effectively avoided [3, 4].
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