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Abstract
Recombination processes through surface states with arbitrary distributions are analyzed on computer, and the behavior of the band edge photoluminescence (PL) intensity. I PL, is studied. In contrast to previous PL analyses based on an assumption of a constant surface recombination velocity S c, the present result shows that S c is not a constant, but strongly depends on the intensity of the excitation light, ø. The behavior of I PL versus ø is investigated in detail for different shapes and densities of surface states. The effect of fixed surface charge is also analyzed. It is shown that N ss distributions on free surfaces can be determined by a detailed measurement of the ratio I PL/øversusø. The result is applied to actual measurement on chemically etched and sulfur-treated GaAs surfaces.
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