Abstract
From the reflectance expressions for a thin biaxial layer on an isotropic substrate we relate reflectance-difference spectroscopy (RDS), surface photoabsorption (SPA), and spectroellipsometry. Using these results and our recently acquired RD database, we determine surface reconstructions present during flow-modulated organometallic chemical vapor growth of epitaxial GaAs from SPA data that were published by others.
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