Abstract
The techniques of electron and oprical microscopy were used to establish correlations between the morphology and the electrical properties of tetrathiofulvalinium-tetracyanoquinodimethane (TTFTCNQ) thin films. Glass, monocrystalline silicon and the (100) cleavage planes of LiF, KBr and NaCl were used as the substrates. The TTFTCNQ films are polycrystalline but are to some degree oriented depending on the substrate material. Doubly oriented areas diminishing with decreasing substrate temperature during deposition were found on KBr and NaCl. The electrical conductivity depends on the film thickness. Particularly high conductivities are measured at a thickness of about 150 nm. Above 450 nm the disordered growth of a porous film takes place with a corresponding decrease in conductivity. The thin film conductivity was found to be a nearly linear function of the predominant crystallite length.
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