Abstract
We propose a model which describes the frequency shift $(\ensuremath{\Delta}{\ensuremath{\omega}}_{\mathit{SM}})$ of the stretching mode (SM) of $\mathrm{Si}\mathrm{H}$ monohydrides (MH's) when incorporated in hydrogenated amorphous silicon $(a\text{\ensuremath{-}}\mathrm{Si}:\mathrm{H})$ with respect to the unscreened MH SM at $\ensuremath{\sim}2099\ifmmode\pm\else\textpm\fi{}2\phantom{\rule{0.3em}{0ex}}{\mathrm{cm}}^{\ensuremath{-}1}$. The model is based on an effective medium approximation of the dielectric using multiple Lorentz-Lorenz dielectrics, corresponding to a host dielectric with MH's embedded in cavities, separately. The $\ensuremath{\Delta}{\ensuremath{\omega}}_{\mathit{SM}}$ as derived in this model correctly predicts all bulk MH-SM positions in $a\text{\ensuremath{-}}\mathrm{Si}:\mathrm{H}$ films and relates it directly to the nanostructure of the MH bulk configurations.
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