Relation between thermal equilibrium temperature and bandgap in undoped hydrogenated amorphous silicon-based alloys

Abstract

Abstract This Letter demonstrates that there is a good correlation between the thermal equilibrium temperature T E and the optical gap E opt for undoped hydrogenated amorphous silicon (a-Si: H) and a-Si-based alloys: T E, is proportional to E opt for both wide-bandgap a-Si-based alloys, such as a-Si1–x Cx: H and a-Si1–x Nx: H, and narrow-bandgap a-Si1–xCx: H alloys. It is also found that the relaxation process of all thermally-induced metastable changes in these alloys follows a stretched exponential form.