Abstract
Dynamic domain wall movements in advanced grain-oriented silicon steel (GO) magnetized in alternating fields of 50 Hz were observed using the line-sampling stroboscopic technique in a scanning electron microscope. Domain wall interactions among grains were investigated in relation to the differences in crystal orientation. Several kinds of GO which differed in permeability and iron loss, and GO artifically domain refined were examined. It was shown that an essential factor to obtain lower losses in GO is uniform domain wall movements in each grain. Differences of wall displacement speeds among grains were smaller in GO with orientation near (110) [001] than in GO with orientation deviated from (110) [001]. After artificial domain refining these differences became much smaller, and subsequently much lower losses were obtained in GO with orientation near (110) [001].
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